| PART |
Description |
Maker |
| AS8E128K32Q-15IT |
128K x 32 EEPROM radiation tolerant memory array
|
Austin Semiconductor
|
| 28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
|
Maxwell Technologies, Inc
|
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| WE128K32-120G4MA WE128K32P-300H1CA WE128K32P-300H1 |
128K X 32 EEPROM 5V MODULE, 120 ns, CQFP68
128K X 32 EEPROM 5V MODULE, 300 ns, CPGA66
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
| W27L01 W27L01P-70 W27L01P-90 W27L01Q-70 W27L01Q-90 |
From old datasheet system
128K X 8 ELECTRICALLY ERASABLE EPROM 128K X 8 EEPROM 12V, 90 ns, PDSO32
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| MEM8128VM-15 MEM8128VI-20 |
128K X 8 EEPROM 5V, 150 ns, CDXA32
128K X 8 EEPROM 5V, 200 ns, CDXA32
|
|
| WE128K32-XH1X WE128K32-XG2TX WE128K32NP-200H1Q WE1 |
EEPROM MCP
128K X 32 EEPROM 5V MODULE, 200 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 1.075 x 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 150 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 140 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 250 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
|
Microsemi, Corp.
White Electronic Designs, Corp.
|
| LE24CB1283 |
Two Wire Serial Interface EEPROM (128K EEPROM)
|
Sanyo Semicon Device
|
| WE128K32N-150G2TC WE128K32N-150G2TCA WE128K32P-300 |
128K X 32 EEPROM 5V MODULE, 125 ns, CQFP68
128K X 32 EEPROM 5V MODULE, 125 ns, CPGA66
|
WHITE ELECTRONIC DESIGNS CORP
MICROSEMI CORP-PMG MICROELECTRONICS
|
| SST29EE010-150-4C-EH SST29EE010-250-4C-NH SST29EE0 |
1 Mbit (128K x 8) page-mode EEPROM
From old datasheet system
1 Mbit (128K x8) Page-Mode EEPROM
|
SST[Silicon Storage Technology Inc]
SST[Silicon Storage Technology, Inc]
|
| APC12G03-9MAJ APC12Y03-9MAJ APC12J03-91 APC12G03-9 |
CHOKE,AXIAL,CONFORMAL,33uH, 5% INDUCTIVE TOL,370 IDC,
CHOKE,AXIAL,CONFORMAL,1uH, 10% INDUCTIVE TOL,385 IDC,
CHOKE,AXIAL,CONFORMAL,82uH, 5% INDUCTIVE TOL,290 IDC,
CHOKE,AXIAL,CONFORMAL,27uH, 10% INDUCTIVE TOL,390 IDC,
CHOKE,AXIAL,CONFORMAL,120uH, 5% INDUCTIVE TOL,100 IDC,
SOCKET,SHORT BLKS,BLK,OPEN -10
CHOKE,AXIAL,CONFORMAL,390uH, 5% INDUCTIVE TOL,133 IDC,
CHOKE,AXIAL,CONFORMAL,22uH, 5% INDUCTIVE TOL,140 IDC,
CHOKE,AXIAL,CONFORMAL,10uH, 5% INDUCTIVE TOL,130 IDC,
CHOKE,AXIAL,CONFORMAL,100uH, 5% INDUCTIVE TOL,275 IDC,
SOCKET,SHORT BLKS,BLK,CLOSE, (10)
CHOKE,AXIAL,CONFORMAL,1000uH, 5% INDUCTIVE TOL,100 IDC,
CHOKE,AXIAL,CONFORMAL,47uH, 5% INDUCTIVE TOL,340 IDC,
CHOKE,AXIAL,CONFORMAL,100uH, 5% INDUCTIVE TOL,125 IDC,
|
Astec America, Inc
|
|
